Low temperature gas-phase carbon removal
US9378969B2 · kind B2 · utility
509Cited by
624References
14Claims
0Family size
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Key dates
| Filing date | Jun 19, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.