Plasma etching process

US9378970B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Olivier Joubert · Meylan, FR
• Gilles Cunge · Fontaine, FR
• Emilie Despiau-Pujo · Grenoble, FR
• Erwine Maude Pargon · Le Pont-de-Claix, FR
• Nicolas Posseme · Grenoble, FR

Key dates

• Filing date: Jan 30, 2015
• Grant date: Jun 28, 2016
• Expiry date: Jan 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67069
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.