Metal PVD-free conducting structures
US9379008B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Feb 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.