Oxide mediated epitaxial nickel disilicide alloy contact formation
US9379012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2016 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jan 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.