Bottom-up metal gate formation on replacement metal gate finFET devices
US9379221B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jan 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a replacement metal gate in a transistor device, a fin field effect transistor (finFET), and method of fabricating a finFET device with the replacement metal gate are described. The method of fabricating the replacement metal gate includes forming a dummy gate structure over a substrate, the dummy gate structure being surrounded by an insulating layer, and removing the dummy gate structure so as to expose a trench within the insulating layer. The method also includes conformally depositing a dielectric material layer and a work function metal layer over a the insulating layer and in the trench and removing the dielectric material layer and the work function metal layer from a tip surface of the insulating layer, recessing the work function metal layer below a top of the trench, and selectively forming a gate metal only on exposed surfaces of the work function metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.