Lateral diffused metal-oxide-semiconductor device
US9379237B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jan 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.