Non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween

US9379255B2 · kind B2 · utility

Assignee

• Silicon Storage Technology, Inc. · US

Inventors

• Chunming Wang · Nanhu, CN
• Baowei Qiao · Chengdu, CN
• Zufa Zhang · Singapore, SG
• Yi Zhang · Austin, US
• Shiuh-Luen Wang · San Jose, US
• Wen-Juei Lu · Sunnyvale, US

Key dates

• Filing date: Jul 16, 2012
• Grant date: Jun 28, 2016
• Expiry date: Nov 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed.