Shiuh-Luen Wang
5Patents
3h-index
12Co-inventors
50Inventor score
Filing activity: Sep 4, 1997 → Aug 8, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6017808A | Nitrogen implanted polysilicon gate for MOSFET gate oxide hardening | Electricity | 42 | Expired |
| US6020242A | Effective silicide blocking | Electricity | 30 | Expired |
| US9190532B2 | Method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby | Electricity | 6 | Active |
| US8513728B2 | Array of split gate non-volatile floating gate memory cells having improved strapping of the coupling gates | Electricity | 3 | Active |
| US9379255B2 | Non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.