Patent · US Active

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

US9379314B2 · kind B2 · utility

63Cited by

1References

10Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Chando Park · San Diego, US
Kangho Lee · Singapore, SG
Seung H. Kang · San Diego, US

Key dates

Filing date	Dec 17, 2013
Grant date	Jun 28, 2016
Priority date	—
Expiry date	Apr 16, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/80
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.