Sputtering target, method for manufacturing sputtering target, and method for forming thin film
US9382611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2012 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/76
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.