Lanthanum target for sputtering
US9382612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.