Trench filling method and processing apparatus
US9384974B2 · kind B2 · utility
0Cited by
4References
5Claims
0Family size
Assignee
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Key dates
| Filing date | May 23, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jul 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.