Method of forming trenches
US9384978B1 · kind B1 · utility
2Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.