Oxide etching method
US9384993B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying HF gas and NH3 gas as reactant gases and a diluent gas to the chamber to conduct a reaction treatment in which the HF gas and the NH3 gas are reacted with the silicon oxide film. Thereafter, a heating process is performed to remove a reaction product generated by the reaction treatment. In the reaction treatment, a pressure in the chamber is increased to a predetermined value by increasing a flow rate of the diluent gas so that no etching residue remains and an etching shape has high verticality after the heating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.