Spacer to prevent source-drain contact encroachment
US9385030B2 · kind B2 · utility
4Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jun 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the present invention relate to approaches for preventing contact encroachment in a semiconductor device. A first portion of a contact trench can be etched partway to a source-drain region of the semiconductor device. A dielectric liner can be deposited in this trench. A second etch can be performed on the lined trench to etch the contact trench channel the remainder of the way to the source-drain region. This leaves a portion of the dielectric liner remaining in the trench (e.g., covering the vertical walls of the trench) after the second etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.