Patent · US Active

Glass carrier with embedded semiconductor device and metal layers on the top surface

US9385075B2 · kind B2 · utility

2Cited by
12References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 26, 2012
Grant dateJul 5, 2016
Priority date
Expiry dateOct 26, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19104
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A device includes a semiconductor material having a first main surface, an opposite surface opposite to the first main surface and a side surface extending from the first main surface to the opposite surface. The device further includes a first electrical contact element arranged on the first main surface of the semiconductor material and a glass material. The glass material includes a second main surface wherein the glass material contacts the side surface of the semiconductor material and wherein the first main surface of the semiconductor material and the second main surface of the glass material are arranged in a common plane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.