Semiconductor devices

US9385105B2 · kind B2 · utility

Assignee

• Intel Deutschland GmbH · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Gerald Ofner · Regensburg, DE
• Bernd Waidhas · Nittendorf, DE
• Hans-Joachim Barth · Munich, DE
• Sven Albers · Regensburg, DE
• Reinhard Golly · Munich, DE
• Philipp Riess · Munich, DE
• Bernd Ebersberger · Egmating, DE

Key dates

• Filing date: Jan 10, 2013
• Grant date: Jul 5, 2016
• Expiry date: Jan 10, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3511
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes: a chip having at least one electrically conductive contact at a first side of the chip; an extension layer extending laterally from one or more sides of the chip; a redistribution layer on a surface of the extension layer and the first side, and coupled to the contact; an interposer having at least one electrically conductive contact at a first surface of the interposer and coupled to the redistribution layer, and at least one electrically conductive contact at a second surface of the interposer opposite to the first surface; a molding material at least partially enclosing the chip and the redistribution layer, and in contact with the interposer. Another semiconductor device includes: an interposer; a redistribution layer over the interposer; a circuit having first and second circuit portions, wherein the redistribution layer includes the first circuit portion, and the interposer includes the second circuit portion.