Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices
US9385132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2011 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Oct 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an array of recessed access device gate constructions includes using the width of an anisotropically etched sidewall spacer in forming mask openings in an etch mask for forming all recessed access device trenches within semiconductor material within all of the array. The etch mask is used while etching all of the recessed access device trenches into the semiconductor material within all of the array through the mask openings. Individual recessed access gate constructions are formed in the individual recessed access device trenches. Other methods are contemplated, including arrays of recessed access devices independent of method of manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.