Silicon dot formation by self-assembly method and selective silicon growth for flash memory
US9385136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.