Fin shaped semiconductor device structures having tipped end shape and method for fabricating the same
US9385236B1 · kind B1 · utility
6Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.