STT-MRAM design enhanced by switching current induced magnetic field
US9385305B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.