Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber
US9386680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Sep 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.