Method for deposition of conformal films with catalysis assisted low temperature CVD
US9388491B2 · kind B2 · utility
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26References
5Claims
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Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45523
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.