Methodology of optical proximity correction optimization
US9390217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for performing optical proximity correction (OPC) and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first OPC modification to a mask feature of the design database is made by performing a first OPC process. The OPC process includes: dividing the mask feature into child shapes and adjusting an attribute of a child shape based on an edge placement error (EPE) factor. A first lithography simulation is performed utilizing a first set of performance indexes after making the first OPC modification, and a second OPC modification to the mask feature is made based on a result of the first lithography simulation. A second lithography simulation of the mask feature is performed utilizing a second set of performance indexes to verify the first and second OPC modifications, and the design database is provided for manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.