Integrated circuit on SOI comprising a transistor protecting from electrostatic discharges

US9391057B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA

Inventors

• Claire Fenouillet-Beranger · Grenoble, FR
• Pascal Fonteneau · Theys, FR

Key dates

• Filing date: Apr 25, 2014
• Grant date: Jul 12, 2016
• Expiry date: Jul 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/931

Abstract

An integrated circuit includes first and second electronic components, a buried UTBOX insulating layer, first and second ground planes plumb with the first and second electronic components, first and second wells, first and second biasing electrodes making contact with the first and second wells and with the first and second ground planes, a third electrode making contact with the first well, a first trench isolation separating the first and third electrodes and extending through the buried insulating layer as far as into the first well, and a second trench isolation that isolates the first electrode from the first component, and that does not extend as far as the interface between the first ground plane and the first well.