Semiconductor device
US9391135B1 · kind B1 · utility
17Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Mar 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an IGBT is formed to include a plurality of termination trenches in a termination region of the IGBT. An embodiment may include that one end of one or more termination trenches may be exposed on one surface of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.