Methods of adding dopants to conductive interconnect structures in substrate technologies and structures formed thereby
US9394619B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4644
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include forming an opening in a dielectric material of a package substrate, and then plating a conductive interconnect structure in the opening utilizing a plating process. The plating process may comprises a conductive metal and a dopant comprising between about 0.05 and 10 percent weight, wherein the dopant comprises at least one of magnesium, zirconium and zinc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.