Gallium ION source and materials therefore
US9396902B2 · kind B2 · utility
8Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2012 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.