Patent · US Active

Method for producing a semiconductor component with insulated semiconductor mesas

US9396997B2 · kind B2 · utility

1Cited by

6References

28Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz Hirler · Isen, DE
Anton Mauder · Kolbermoor, DE
Hermann Gruber · Leverkusen, DE
Hubert Rothleitner · Villach, AT
Andreas Meiser · Unterhaching, DE

Key dates

Filing date	Nov 3, 2011
Grant date	Jul 19, 2016
Priority date	—
Expiry date	Sep 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.