Nanodot charge storage structures
US9397105B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 9, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods, devices, and systems associated with charge storage structures in semiconductor devices are described herein. In one or more embodiments, a method of forming nanodots includes forming at least a portion of a charge storage structure over a material by reacting a single-source precursor and a reactant, where the single-source precursor includes a metal and a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.