Integrated inductor and magnetic random access memory device
US9397139B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2015 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F17/0013
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Devices and methods of forming a device are disclosed. The method includes providing a substrate defined with at least first and second regions. A first upper dielectric layer is provided over the substrate. The first upper dielectric layer comprises a first upper interconnect level with a plurality of metal lines. A dielectric layer is formed over the first upper dielectric layer. The dielectric layer includes a second upper interconnect level with a plurality of metal lines. A magnetic random access memory (MRAM) cell is formed between the first and second upper interconnect levels in the first region. An inductor is formed in the second region. The inductor includes a lower inductor level formed from metal lines in the first upper interconnect level and an upper inductor level formed from metal lines in the second upper interconnect level. The metal lines in the lower inductor level and upper inductor level are coupled by via contacts to form loops of the inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.