Diffusion-controlled oxygen depletion of semiconductor contact interface
US9397181B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Mar 19, 2014 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.