Apparatus and methods for improving the intensity profile of a beam image used to process a substrate
US9401278B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Apr 15, 2014 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Aug 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.