Patent · US Active

P-side layers for short wavelength light emitters

US9401452B2 · kind B2 · utility

30Cited by

2References

20Claims

0Family size

Assignee

Palo Alto Research Center Incorporated · US

Inventors

John E. Northrup · Palo Alto, US
Bowen Cheng · Atherton, US
Christopher L. Chua · San Jose, US
Thomas Wunderer · Palo Alto, US
Noble M. Johnson · Menlo Park, US
Zhihong Yang · San Jose, US

Key dates

Filing date	Sep 14, 2012
Grant date	Jul 26, 2016
Priority date	—
Expiry date	Mar 24, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/04257
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.