Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure

US9401454B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Ivan-Christophe Robin · Grenoble, FR
• Alexei Tchelnokov · Meylan, FR

Key dates

• Filing date: Aug 25, 2014
• Grant date: Jul 26, 2016
• Expiry date: Aug 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/034

Abstract

The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region (10) with a first type of conductivity, and a second semiconducting region (20) with a second type of conductivity, at least on a portion (220, 210), so as to form a junction semiconducting with the first region (10). This second region (20) has at least a first portion (210) in contact with the first region (10), this first portion (210) comprising at least one first and one second carrier confinement zone (211, 212). The structure (1) comprises at least a first means of polarizing the first portion (210) adapted to apply direct first external polarization to the first portion (210) in order to modify the distribution of carriers of at least one type of conductivity in the first portion (210) relative to the first and second confinement zones (211, 212). The invention also relates to a method of manufacturing a semiconducting structure (1) and a device comprising at least such a structure (1).