Surface treatment and deposition for reduced outgassing
US9404178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45565
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.