High-temperature isotropic plasma etching process to prevent electrical shorts
US9405089B2 · kind B2 · utility
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2References
9Claims
0Family size
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Key dates
| Filing date | Nov 5, 2014 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Nov 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/294
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.