Plasma enhanced chemical vapor deposition (PECVD) source
US9406487B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.