Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films
US9406507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.