Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applications
US9406544B1 · kind B1 · utility
1Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Jun 12, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Jun 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling a trench in a substrate includes partially filling the trench with a first silicon dioxide layer. An amorphous silicon layer is deposited on the silicon dioxide layer. The trench is filled with a second silicon dioxide layer. An oxidation treatment is performed on the substrate to oxidize the amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.