Method for forming single diffusion breaks between finFET devices and the resulting devices
US9406676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a fin in a semiconductor substrate. A plurality of sacrificial gate structures are formed above the fin. A selected one of the sacrificial gate structures is removed to define a first opening that exposes a portion of the fin. An etch process is performed through the first opening on the exposed portion of the fin to define a first recess in the fin. The first recess is filled with a dielectric material to define a diffusion break in the fin. A device includes a fin defined in a substrate, a plurality of gates formed above the fin, a plurality of recesses filled with epitaxial material defined in the fin, and a diffusion break defined at least partially in the fin between two of the recesses filled with epitaxial material and extending above the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.