Logic finFET high-K/conductive gate embedded multiple time programmable flash memory

US9406689B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Xia Li · San Diego, US
• Bin Yang · San Diego, US
• Seung H. Kang · San Diego, US

Key dates

• Filing date: Oct 2, 2013
• Grant date: Aug 2, 2016
• Expiry date: Oct 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type. The method further includes forming a floating gate dielectric to partially surround the fins. The method also includes forming a floating gate on the floating gate dielectric. The method also includes forming a coupling film on the floating gate and forming a coupling gate on the coupling film.