Semiconductor device
US9406869B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Apr 24, 2013 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Apr 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A semiconductor device includes: a first magnetic layer (1) disposed on a flat substrate surface; a second magnetic layer (3) disposed above the first magnetic layer (1) and magnetically coupled to the first magnetic layer (1) by magnetostatic coupling or exchange coupling; and a third thin film layer (8) formed between the first magnetic layer (1) and the second magnetic layer (3), the third thin film layer (8) having such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer (1) and the second magnetic layer (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.