Integrated electro-absorption modulator
US9411177B2 · kind B2 · utility
10Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Jun 17, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.