Methods for forming group III-nitride materials and structures formed by such methods
US9412580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Nov 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.