Low-K dielectric gapfill by flowable deposition
US9412581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.