Deposition of smooth metal nitride films
US9412602B2 · kind B2 · utility
12Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Mar 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.