Use of grapho-epitaxial directed self-assembly to precisely cut lines
US9412611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension Lo that is between 0.9 and 1.1 times the spacing between individual lines of the plurality of lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.