Patent · US Active

Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex

US9412824B2 · kind B2 · utility

1Cited by

1References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Neidhart · Klagenfurt, AT
Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT
Alexander Susiti · Bad Bleiberg, AT

Key dates

Filing date	Sep 9, 2014
Grant date	Aug 9, 2016
Priority date	—
Expiry date	Sep 9, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/26506
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.