High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods
US9413349B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects disclosed in the detailed description include high-k (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods. One type of HK/MG MTP switching device is an MTP metal-oxide semiconductor (MOS) field-effect transistor (MOSFET). When the MTP MOSFET is programmed, a charge trap may build up in the MTP MOSFET due to a switching electrical current induced by a switching voltage. The charge trap reduces the switching window and endurance of the MTP MOSFET, thus reducing reliability in accessing the information stored in the MTP MOSFET. In this regard, an HK/MG MTP switching device comprising the MTP MOSFET is configured to eliminate the switching electrical current when the MTP MOSFET is programmed. By eliminating the switching electrical current, it is possible to avoid a charge trap in the MTP MOSFET, thus restoring the switching window and endurance of the MTP MOSFET for reliable information access.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.